| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N4033 is a PNP bipolar junction transistor manufactured by NTE Electronics. It features a collector-emitter voltage (VCEO) of 80V and a collector current (IC) rating of 1A, making it suitable for medium-power switching and amplification applications. The transistor offers a minimum DC current gain (hFE) of 75 when tested at 100µA collector current and 5V VCE. The collector-emitter saturation voltage is typically 1V at 100mA base current and 1A collector current. Power dissipation is rated at 800mW. The device is packaged in a TO-205AD / TO-39-3 metal can through-hole package, which provides robust mechanical and thermal performance. The supplier device package is TO-39. Mounting is through-hole, suitable for standard PCB or socket mounting. The transistor is listed as RoHS3 compliant and REACH unaffected, though these compliance statuses are unverified. It is cross-referenced with DigiKey part number 2368-2N4033-ND.
80V.
TO-205AD / TO-39-3 metal can through-hole package, also referred to as TO-39.
1A.
800mW.
Minimum 75 at 100µA, 5V.
Maximum 1V at 100mA base current, 1A collector current.
It is listed as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.