| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Power Dissipation |
The 2N4014 is a silicon planar epitaxial transistor manufactured by ON Semiconductor, suitable for memory applications. It features a TO-18 metal case and is designed for high-voltage, high-current switching tasks.
Key electrical specifications include a maximum collector current of 500mA and a collector-emitter voltage of 40V. The maximum power dissipation is rated at 360mW, with a general power dissipation of 1.4W. The transistor operates reliably up to a maximum temperature of 175°C.
This transistor is characterized by its 3 terminals and TO-18 package, making it suitable for through-hole mounting. Its design focuses on providing robust switching capabilities for memory systems and other applications demanding specific voltage and current handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2N4014 is 500mA.
The collector-emitter voltage rating for the 2N4014 is 40V.
The 2N4014 can operate up to a maximum temperature of 175°C.
The 2N4014 is supplied in a TO-18 metal case package.