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The 2N3964 from STMicroelectronics is a PNP bipolar junction transistor (BJT) suitable for small signal applications. It offers a collector-emitter breakdown voltage of 45V and can handle a continuous collector current of up to 200mA. The device has a power dissipation rating of 360mW.
Key electrical characteristics include a DC current gain (hFE) ranging from 100k to 800k, and a current gain-bandwidth product (fT) of 50MHz. It also exhibits a low noise figure, typically 2dB. The transistor is housed in a TO-18 package, a common through-hole form factor.
With its specifications, the 2N3964 is designed for general-purpose amplification and switching tasks where low noise performance is beneficial. The TO-18 package allows for easy insertion into breadboards or PCBs for prototyping and production.
| Qty | Low | High |
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (BV CEO) is 45V.
The continuous collector current (IC) is 200mA.
The power dissipation is 360mW.
The typical noise figure (NF) is 2dB.
The junction temperature range is -65°C to 200°C.
The 2N3964 is available in a TO-18 package.