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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3964 is a general-purpose PNP bipolar junction transistor (BJT) manufactured by Texas Instruments, suitable for small signal applications. This through-hole component is housed in a TO-18 package.
Key electrical specifications include a collector-emitter breakdown voltage (BV CEO ) of 45V and a continuous collector current (I C ) of 200mA. The device offers a DC current gain (h FE ) ranging from 90,000 to 800,000, with a typical value of 250,000. Its current gain-bandwidth product (f T ) is 50MHz. The transistor exhibits a low noise figure, typically 2dB, making it suitable for noise-sensitive circuits.
With a power dissipation rating of 360mW, the 2N3964 operates within a junction temperature range of -65°C to 200°C. The TO-18 package is a standard metal can package, facilitating through-hole mounting. The device is specified with a thermal resistance junction-to-ambient of 486°C/W and junction-to-case of 146°C/W.
Environmental compliance includes RoHS3 compliance and Moisture Sensitivity Level 1. The 2N3964 is designed for applications requiring a reliable small signal PNP transistor.
| Qty | Low | High |
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (BV CEO) of the 2N3964 is 45V.
The continuous collector current (I C) for the 2N3964 is 200mA.
The typical DC current gain (h FE) of the 2N3964 is 250,000.
The 2N3964 transistor comes in a TO-18 package.
The 2N3964 operates within a junction temperature range of -65°C to 200°C.