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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ITT Cannon 2N3964 is a general purpose PNP bipolar transistor designed for small signal applications. It offers a collector-emitter breakdown voltage of 45V and can handle a continuous collector current of up to 200mA.
Key electrical characteristics include a DC current gain (hFE) ranging from 100x10³ to 800x10³, a current gain-bandwidth product (fT) of 50MHz, and a low noise figure of 2dB. The transistor also features a base-emitter saturation voltage (VBE(SAT)) of 0.9V typical and a collector-emitter saturation voltage (VCE(SAT)) of 250mV typical.
Packaged in a TO-18 case, the 2N3964 is suitable for through-hole mounting. It operates within a junction temperature range of -65°C to 200°C. The component has a power dissipation rating of 360mW.
This transistor is well-suited for various electronic circuits requiring amplification or switching with low noise characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (BV CEO) for the 2N3964 is 45V.
The continuous collector current (IC) for the 2N3964 is 200mA.
The 2N3964 transistor comes in a TO-18 case type.
The typical DC current gain (hFE) for the 2N3964 is between 250x10³ and 600x10³.
The noise figure (NF) for the 2N3964 is typically 2dB.
The 2N3964 transistor has a junction temperature range of -65°C to 200°C.