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2N3960 The 2N3960 is an NPN silicon annular transistor from Motorola Semiconductor, designed for high-speed current-mode logic switching applications. It features a TO-18 package.
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2N3960

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Mfr Name: Motorola Semicondutor
Motorola Semicondutor
The 2N3960 is an NPN silicon annular transistor from Motorola Semiconductor, designed for high-speed current-mode logic switching applications. It features a TO-18 package.
✓ Total Stock: 41 pcs
$ Price Range: $0.77

2N3960 Available from 1 distributor

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2N3960 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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2N3960 Description

Short technical summary and product information.

The 2N3960 is an NPN silicon annular transistor manufactured by Motorola Semiconductor, specifically engineered for high-speed current-mode logic switching applications. This device offers a maximum collector-emitter voltage of 40V and a maximum collector current of 1A, making it suitable for various switching tasks.

 

The transistor is housed in a TO-18 package, a common metal can package known for its durability and thermal performance. Its electrical characteristics include a DC current gain (hFE) ranging from 29 to 40, and a typical current-gain bandwidth product (fT) of 1000 MHz at 10mA collector current and 10V Vce. The typical switching times, such as turn-on delay of 30ns and turn-off delay of 90ns, highlight its suitability for fast switching circuits.

 

With an operating temperature range of -65°C to 200°C, the 2N3960 is designed to perform reliably under a variety of environmental conditions. Its design is particularly well-suited for applications requiring efficient and rapid switching of electrical signals.

2N3960 Quick Information

Product Type: Bipolar Transistor
Canonical Name: 2N3960 NPN Silicon Annular Transistor
Subcategory: Single

2N3960 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N3960 Estimated Pricing

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1+ $0.77 $0.77

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N3960 Features

  • NPN silicon annular transistor for high-speed switching.
  • Maximum collector-emitter voltage of 40V.
  • Maximum collector current of 1A.
  • TO-18 metal can package.
  • Typical current-gain bandwidth product of 1000 MHz.

2N3960 Applications

  • Ideal for current-mode logic circuits.
  • Suitable for high-speed switching applications.
  • Used in general purpose electronic designs.
  • Component in logic gate implementations.

2N3960 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the 2N3960?

The maximum collector-emitter voltage (Vce) for the 2N3960 is 40 Vdc.

What is the maximum collector current of the 2N3960 transistor?

The maximum collector current (Ic) for the 2N3960 is 1 A.

What is the package type for the 2N3960?

The 2N3960 comes in a TO-18 package.

What is the typical current-gain bandwidth product (fT) of the 2N3960?

The typical current-gain bandwidth product (fT) for the 2N3960 is 1000 MHz at IC = 10 mAdc and VCE = 10 Vdc.

What are the typical switching times for the 2N3960?

The typical turn-on delay time is 30 ns and the typical turn-off delay time is 90 ns.

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