2N3960 The SP 2N3960 is an NPN silicon annular transistor designed for high-speed current-mode logic switching applications. It features a TO-18 package.
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2N3960

Available from 1 distributors
Mfr Name: SP
SP
The SP 2N3960 is an NPN silicon annular transistor designed for high-speed current-mode logic switching applications. It features a TO-18 package.
✓ Total Stock: 133 pcs
$ Price Range: $0.77

2N3960 Available from 1 distributor

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✓ Non-Authorised
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2N3960 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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2N3960 Description

Short technical summary and product information.

The SP 2N3960 is an NPN silicon annular transistor specifically engineered for high-speed current-mode logic switching applications. It offers a maximum collector-emitter voltage (Vceo) of 40V and a continuous collector current (Ic) of 0.5A, with a peak capability of 1A.

 

Key electrical characteristics include a typical DC current gain (hFE) of 40 at 10mA and a typical current-gain bandwidth product (fT) of 100 MHz. The transistor also exhibits typical switching times, with a turn-on delay of 16ns and a turn-off delay of 30ns.

 

Packaged in a standard TO-18 metal can, the 2N3960 is suitable for through-hole mounting. Its operating temperature range is -65°C to 200°C, making it robust for various environmental conditions.

2N3960 Quick Information

Product Type: Bipolar Transistor
Canonical Name: 2N3960 NPN Silicon Annular Transistor
Subcategory: Single

2N3960 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N3960 Estimated Pricing

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1+ $0.77 $0.77

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N3960 Features

  • NPN silicon annular transistor
  • 40V collector-emitter voltage
  • 1A continuous collector current
  • 100 MHz typical gain-bandwidth product
  • TO-18 metal can package

2N3960 Applications

  • Suitable for switching applications
  • Used in amplification circuits
  • Ideal for high-frequency RF circuits
  • Applicable in power control modules

2N3960 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the 2N3960?

The maximum collector-emitter voltage (Vceo) for the 2N3960 is 40 Vdc.

What is the continuous collector current rating of the 2N3960?

The 2N3960 has a continuous collector current (Ic) rating of 0.5 A.

What is the typical DC current gain (hFE) of the 2N3960?

The typical DC current gain (hFE) for the 2N3960 is 40 at IC = 10 mAdc and VCE = 1 Vdc.

What is the operating temperature range for the 2N3960 transistor?

The 2N3960 transistor can operate in a temperature range of -65°C to 200°C.

What package type is the 2N3960 available in?

The 2N3960 is available in a TO-18 package.

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