| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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133 pcs
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133 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SP 2N3960 is an NPN silicon annular transistor specifically engineered for high-speed current-mode logic switching applications. It offers a maximum collector-emitter voltage (Vceo) of 40V and a continuous collector current (Ic) of 0.5A, with a peak capability of 1A.
Key electrical characteristics include a typical DC current gain (hFE) of 40 at 10mA and a typical current-gain bandwidth product (fT) of 100 MHz. The transistor also exhibits typical switching times, with a turn-on delay of 16ns and a turn-off delay of 30ns.
Packaged in a standard TO-18 metal can, the 2N3960 is suitable for through-hole mounting. Its operating temperature range is -65°C to 200°C, making it robust for various environmental conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the 2N3960 is 40 Vdc.
The 2N3960 has a continuous collector current (Ic) rating of 0.5 A.
The typical DC current gain (hFE) for the 2N3960 is 40 at IC = 10 mAdc and VCE = 1 Vdc.
The 2N3960 transistor can operate in a temperature range of -65°C to 200°C.
The 2N3960 is available in a TO-18 package.