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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,020 pcs
|
13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Automotive Grade | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N3906TA is a general-purpose PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for low-power switching and amplification applications.
Key electrical specifications include a collector-emitter breakdown voltage of 40V, a continuous collector current rating of 200mA, and a power dissipation of 625mW. The device offers a minimum DC current gain (hFE) of 100 at 10mA collector current and 1V collector-emitter voltage, with a maximum collector-emitter saturation voltage of 400mV at 50mA. The transition frequency is 250MHz, making it suitable for moderate-speed switching circuits.
The transistor is housed in a through-hole TO-92-3 package (TO-226-3, TO-92-3 (TO-226AA) Formed Leads) and can operate over a junction temperature range of -55°C to 150°C. Its PNP polarity and standard pinout make it a common choice for complementary pair designs with NPN transistors like the 2N3904.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.30 | $0.30 |
| 10+ | $0.18 | $0.18 |
| 100+ | $0.11 | $0.11 |
| 500+ | $0.08 | $0.08 |
| 1,000+ | $0.08 | $0.08 |
| 2,000+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N3906TA is available in a through-hole TO-92-3 package (TO-226-3, TO-92-3 (TO-226AA) Formed Leads).
The operating junction temperature range is -55°C to 150°C.
The collector-emitter breakdown voltage (V(BR)CEO) is 40V.
The maximum continuous collector current is 200mA.
The minimum DC current gain (hFE) is 100 at a test condition of Ic=10mA and Vce=1V.
The transition frequency (fT) is 250 MHz.