2N3906 PNP general purpose transistor with 40V collector-emitter breakdown voltage and 200mA collector current. Housed in a through-hole TO-92 package.
Mfr Part #:

2N3906

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP general purpose transistor with 40V collector-emitter breakdown voltage and 200mA collector current. Housed in a through-hole TO-92 package.
Total Stock: 181,823 pcs
$ Price Range: $0.03

2N3906 Available from 4 distributors

Authorised
Non-Authorised

2N3906 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N3906 Description

Short technical summary and product information.

The 2N3906 is a PNP bipolar junction transistor from On Semiconductor designed for general purpose switching and amplification. It features a maximum collector-emitter breakdown voltage of 40V and a continuous collector current rating of 200mA.

 

Electrical characteristics include a DC current gain (hFE) of 100 minimum at 10mA collector current and 1V VCE, and a transition frequency of 250MHz typical. The saturation voltage is 400mV maximum at 50mA collector current and 5mA base current.

 

The transistor is housed in a through-hole TO-92 package (TO-226-3, TO-92-3), suitable for manual assembly and prototyping. It operates over a junction temperature range of -55°C to 150°C.

2N3906 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2N3906 PNP Transistor
Subcategory: Single BJT

2N3906 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N3906 Estimated Pricing

Qty Low High
50,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N3906 Features

  • PNP bipolar junction transistor.
  • 40V collector-emitter breakdown voltage.
  • 200mA continuous collector current.
  • 625mW power dissipation.
  • Through-hole TO-92 package.

2N3906 Applications

  • Used in general purpose switching circuits.
  • Suitable for low-power amplification stages.
  • Ideal for signal processing in consumer electronics.
  • Common in driver circuits for relays and LEDs.

2N3906 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the 2N3906?

-55°C to 150°C junction temperature.

What package does the 2N3906 come in?

Through-hole TO-92 (TO-226-3, TO-92-3) package.

Is the 2N3906 RoHS compliant?

RoHS3 compliant (unverified).

What type of transistor is the 2N3906?

PNP bipolar junction transistor.

What is the collector-emitter breakdown voltage of the 2N3906?

40V maximum.

What is the maximum collector current of the 2N3906?

200mA.

What is the DC current gain (hFE) of the 2N3906?

Minimum 100 at Ic=10mA, Vce=1V.

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