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89 pcs
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89 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3906 is a widely used PNP bipolar junction transistor designed for general-purpose low-power amplifying or switching applications. It is engineered for low current and power with medium voltage capabilities, and can operate at moderately high speeds.
Key electrical specifications include a maximum Collector Emitter Voltage (VCE) of 40V and a maximum Continuous Collector Current (IC) of 200mA. The DC Current Gain (hFE) typically ranges from 110 to 300. The Base Current (IB) is limited to a maximum of 5mA, and the Emitter Base Voltage (VBE) is 5V.
This transistor is housed in a TO-92 package, making it suitable for through-hole mounting. Its design makes it versatile for various electronic circuits requiring amplification or switching functions at moderate speeds and power levels.
The 2N3906 operates in saturation and cut-off regions, with typical voltages specified for these states. It is designed for applications at collector currents between 10 mA and 100 mA.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
The DC current gain (hFE) typically ranges from 110 to 300 at Vce=5V, Ic=10mA.
The maximum continuous collector current (IC) is 200mA.
The maximum collector-emitter voltage (VCE) is 40V.
The transistor is packaged in a TO-92 case.
The maximum base current (IB) is 5mA.
The typical collector-emitter saturation voltage is 0.4V.
The maximum emitter-base voltage (VBE) is 5V.