| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Medical Grade | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N3904TAR is a general-purpose NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for low-power amplification and switching applications. Key electrical characteristics include a minimum collector-emitter breakdown voltage (Vceo) of 40V, a maximum collector current (Ic) of 200mA, and a maximum power dissipation (Pd) of 625mW. The device offers a typical transition frequency (fT) of 300MHz, making it suitable for moderate-speed switching and amplification up to VHF frequencies. The minimum DC current gain (hFE) is 100 at a test condition of Ic=10mA and Vce=1V, with a maximum Vce saturation voltage of 300mV at Ib=5mA and Ic=50mA. The transistor is housed in a TO-92-3 (TO-226AA) package with formed leads, designed for through-hole mounting. It supports an operating junction temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.29 | $0.29 |
| 10+ | $0.18 | $0.18 |
| 100+ | $0.11 | $0.11 |
| 500+ | $0.08 | $0.08 |
| 1,000+ | $0.07 | $0.07 |
| 2,000+ | $0.07 | $0.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N3904TAR is available in a TO-92-3 (TO-226AA) through-hole package with formed leads.
The operating junction temperature range is -55°C to 150°C.
RoHS compliance is listed as RoHS3 Compliant but is unverified. Verify with the manufacturer for current compliance status.
The maximum collector current (Ic) is 200mA.
The minimum DC current gain (hFE) is 100 at a test condition of Ic=10mA and Vce=1V.