2N3904RLRAG NPN bipolar transistor with 40V collector-emitter voltage and 200mA collector current. Housed in a TO-92 through-hole package.
Mfr Part #:

2N3904RLRAG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar transistor with 40V collector-emitter voltage and 200mA collector current. Housed in a TO-92 through-hole package.
Total Stock: 2,000 pcs

2N3904RLRAG Available from 1 distributor

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2N3904RLRAG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Operating Temperature
Output Capacitance (Cobo)
Power
Supplier Device Package
Tape & Reel
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N3904RLRAG Description

Short technical summary and product information.

The 2N3904RLRAG is a general-purpose NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for low-power amplification and switching applications.

 

Key electrical specifications include a maximum collector-emitter voltage of 40V, collector-base voltage of 60V, and continuous collector current of 200mA. The DC current gain (hFE) is minimum 100 at 10mA, 1V, and the current-gain bandwidth product (fT) is 300MHz. The device has a maximum power dissipation of 625mW at 25°C ambient.

 

The transistor is offered in a TO-92 through-hole package (TO-226-3, TO-92-3 Long Body with formed leads). It is suitable for general-purpose switching and amplifier circuits in consumer, industrial, and automotive applications where through-hole mounting is preferred.

2N3904RLRAG Quick Information

Product Type: Bipolar (BJT) Transistor
Canonical Name: 2N3904RLRAG NPN Bipolar Transistor
Subcategory: Single NPN

2N3904RLRAG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free Packages are Available

2N3904RLRAG Features

  • NPN silicon bipolar junction transistor.
  • 40V maximum collector-emitter voltage.
  • 200mA continuous collector current.
  • 300MHz current-gain bandwidth product.
  • TO-92 through-hole package.

2N3904RLRAG Applications

  • General purpose switching and amplification.
  • Low-power driver circuits.
  • Signal processing in consumer electronics.
  • Industrial control logic interfaces.

2N3904RLRAG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is 40V.

What package is the 2N3904RLRAG available in?

It is available in a TO-92 through-hole package (TO-226-3, TO-92-3 Long Body with formed leads).

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (junction temperature).

Is the 2N3904RLRAG RoHS compliant?

The device is listed as RoHS3 compliant, though this status is unverified.

What is the DC current gain (hFE)?

The minimum DC current gain is 100 at Ic=10mA, Vce=1V.

What is the transition frequency?

The current-gain bandwidth product (fT) is 300MHz minimum.

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