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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cobo) | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N3904RLRAG is a general-purpose NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for low-power amplification and switching applications.
Key electrical specifications include a maximum collector-emitter voltage of 40V, collector-base voltage of 60V, and continuous collector current of 200mA. The DC current gain (hFE) is minimum 100 at 10mA, 1V, and the current-gain bandwidth product (fT) is 300MHz. The device has a maximum power dissipation of 625mW at 25°C ambient.
The transistor is offered in a TO-92 through-hole package (TO-226-3, TO-92-3 Long Body with formed leads). It is suitable for general-purpose switching and amplifier circuits in consumer, industrial, and automotive applications where through-hole mounting is preferred.
The maximum collector-emitter voltage (VCEO) is 40V.
It is available in a TO-92 through-hole package (TO-226-3, TO-92-3 Long Body with formed leads).
The operating temperature range is -55°C to 150°C (junction temperature).
The device is listed as RoHS3 compliant, though this status is unverified.
The minimum DC current gain is 100 at Ic=10mA, Vce=1V.
The current-gain bandwidth product (fT) is 300MHz minimum.