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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Cutoff Current (IBL) | |
| Collector Cutoff Current (ICEX) | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (Minimum @ Ic=0.1 mA, Vce=1 V) | |
| DC Current Gain (Minimum @ Ic=1 mA, Vce=1 V) | |
| DC Current Gain (Minimum @ Ic=100 mA, Vce=1 V) | |
| DC Current Gain (Minimum @ Ic=50 mA, Vce=1 V) | |
| DC Current Gain (Minimum/Maximum @ IC=10 mA, VCE=1 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Derate above 25°C | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cobo) | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vbe Saturation (Maximum @ IC=50 mA, IB=5 mA) | |
| Vbe Saturation (Minimum/Maximum @ IC=10 mA, IB=1 mA) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Vce Saturation (Maximum @ IC=10 mA, IB=1 mA) | |
| Voltage |
The 2N3904RL1G is an NPN silicon general purpose transistor from ON Semiconductor, designed for low-power amplification and switching applications. It features a maximum collector-emitter voltage (VCEO) of 40V, a maximum collector current of 200mA, and a power dissipation of 625mW at 25°C ambient temperature.
The transistor offers a DC current gain (hFE) ranging from 100 to 300 at 10mA collector current, with a transition frequency (fT) of 300MHz, making it suitable for audio and signal processing circuits. The collector-emitter saturation voltage is typically 0.2V at 10mA collector current, ensuring efficient switching performance.
The device is housed in a TO-92 (TO-226) through-hole package with formed leads, compatible with standard breadboards and PCB layouts. It supports an operating junction temperature range of -55°C to +150°C, with a thermal resistance of 200°C/W junction-to-ambient.
The 2N3904RL1G is a Pb-free and RoHS compliant component, suitable for use in general purpose electronic designs, prototyping, and educational projects.
The maximum collector-emitter voltage (VCEO) is 40V.
The 2N3904RL1G is available in a TO-92 (TO-226) through-hole package with formed leads.
The operating and storage junction temperature range is -55°C to +150°C.
The 2N3904RL1G is RoHS3 compliant and Pb-free packages are available.
The DC current gain (hFE) is typically 100 to 300 at 10mA collector current and 1V collector-emitter voltage.
The transition frequency (fT) is 300MHz at 10mA collector current and 20V collector-emitter voltage.
The collector-emitter saturation voltage is 0.2V maximum at 10mA collector current and 1mA base current.