2N3904RL1G NPN general purpose transistor with 40V collector-emitter voltage, 200mA collector current, and 625mW power dissipation. Housed in a TO-92 through-hole package.
Mfr Part #:

2N3904RL1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN general purpose transistor with 40V collector-emitter voltage, 200mA collector current, and 625mW power dissipation. Housed in a TO-92 through-hole package.
Total Stock: 10,000 pcs

2N3904RL1G Available from 1 distributor

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2N3904RL1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Cutoff Current (IBL)
Collector Cutoff Current (ICEX)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (Minimum @ Ic=0.1 mA, Vce=1 V)
DC Current Gain (Minimum @ Ic=1 mA, Vce=1 V)
DC Current Gain (Minimum @ Ic=100 mA, Vce=1 V)
DC Current Gain (Minimum @ Ic=50 mA, Vce=1 V)
DC Current Gain (Minimum/Maximum @ IC=10 mA, VCE=1 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
Derate above 25°C
Emitter-Base Voltage (VEBO)
Frequency
Lead Style
Mounting Type
Operating Temperature
Output Capacitance (Cobo)
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Transistor Type
Vbe Saturation (Maximum @ IC=50 mA, IB=5 mA)
Vbe Saturation (Minimum/Maximum @ IC=10 mA, IB=1 mA)
Vce Saturation (Max) @ Ib, Ic
Vce Saturation (Maximum @ IC=10 mA, IB=1 mA)
Voltage

2N3904RL1G Description

Short technical summary and product information.

The 2N3904RL1G is an NPN silicon general purpose transistor from ON Semiconductor, designed for low-power amplification and switching applications. It features a maximum collector-emitter voltage (VCEO) of 40V, a maximum collector current of 200mA, and a power dissipation of 625mW at 25°C ambient temperature.

 

The transistor offers a DC current gain (hFE) ranging from 100 to 300 at 10mA collector current, with a transition frequency (fT) of 300MHz, making it suitable for audio and signal processing circuits. The collector-emitter saturation voltage is typically 0.2V at 10mA collector current, ensuring efficient switching performance.

 

The device is housed in a TO-92 (TO-226) through-hole package with formed leads, compatible with standard breadboards and PCB layouts. It supports an operating junction temperature range of -55°C to +150°C, with a thermal resistance of 200°C/W junction-to-ambient.

 

The 2N3904RL1G is a Pb-free and RoHS compliant component, suitable for use in general purpose electronic designs, prototyping, and educational projects.

2N3904RL1G Quick Information

Product Type: NPN Bipolar Junction Transistor
Series: 2N3904
Canonical Name: ON Semiconductor 2N3904RL1G NPN General Purpose Transistor
Subcategory: Single BJT

2N3904RL1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N3904RL1G Features

  • NPN silicon general purpose transistor.
  • Maximum collector-emitter voltage 40V.
  • Continuous collector current 200mA.
  • Power dissipation 625mW.
  • TO-92 through-hole package.

2N3904RL1G Applications

  • Used in general purpose switching and amplification.
  • Suitable for low-power signal processing.
  • Ideal for prototyping and hobbyist projects.
  • Common in audio preamplifier stages.
  • Applicable in driver circuits for relays and LEDs.

2N3904RL1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the 2N3904RL1G?

The maximum collector-emitter voltage (VCEO) is 40V.

What package does the 2N3904RL1G come in?

The 2N3904RL1G is available in a TO-92 (TO-226) through-hole package with formed leads.

What is the operating junction temperature range of the 2N3904RL1G?

The operating and storage junction temperature range is -55°C to +150°C.

Is the 2N3904RL1G RoHS compliant?

The 2N3904RL1G is RoHS3 compliant and Pb-free packages are available.

What is the DC current gain (hFE) of the 2N3904RL1G?

The DC current gain (hFE) is typically 100 to 300 at 10mA collector current and 1V collector-emitter voltage.

What is the transition frequency (fT) of the 2N3904RL1G?

The transition frequency (fT) is 300MHz at 10mA collector current and 20V collector-emitter voltage.

What is the collector-emitter saturation voltage of the 2N3904RL1G?

The collector-emitter saturation voltage is 0.2V maximum at 10mA collector current and 1mA base current.

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