| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
412 pcs
|
412 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
229 pcs
|
229 pcs | On Request | 1 | On Request | On Request | 912 | On Request | On Request | |
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Operating Temperature | |
| Power | |
| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N3904 is a general-purpose NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for low-power amplification and switching applications.
Key electrical specifications include a collector-emitter voltage (VCEO) of 40V, a collector current (IC) rating of 200mA, and a power dissipation of 625mW. The device offers a minimum DC current gain (hFE) of 100 at 10mA collector current and 1V VCE, with a maximum saturation voltage of 300mV at 50mA collector current. The transition frequency (fT) is 300MHz, making it suitable for moderate-speed switching and amplification.
The transistor is housed in a TO-92-3 (TO-226AA) through-hole package, which is widely used for discrete semiconductors. The operating junction temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.44 | $0.44 |
| 10+ | $0.30 | $0.30 |
| 100+ | $0.19 | $0.19 |
| 500+ | $0.09 | $0.09 |
| 1,000+ | $0.08 | $0.08 |
| 2,500+ | $0.06 | $0.06 |
| 5,000+ | $0.06 | $0.06 |
| 10,000+ | $0.05 | $0.05 |
| 20,000+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is 40V.
The maximum collector current (IC) is 200mA.
The 2N3904 is available in a TO-92-3 (TO-226AA) through-hole package.
The operating junction temperature range is -55°C to 150°C.
The transition frequency (fT) is 300MHz.
The minimum DC current gain (hFE) is 100 at Ic=10mA and Vce=1V.
The maximum collector-emitter saturation voltage is 300mV at Ib=5mA and Ic=50mA.