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26 pcs
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26 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The RCA 2N3879 is a high-performance NPN power silicon transistor, qualified per MIL-PRF-19500/526. It is designed for applications such as regulators and shunts in power supplies.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 75V and a collector current (IC) of up to 7A. The device can handle a total power dissipation of 35W at 25°C case temperature. It features a forward-current transfer ratio (hFE) ranging from 40 to 80 at IC = 0.5A, VCE = 5.0V, and 20 to 100 at IC = 4.0A, VCE = 5.0V.
Dynamic characteristics include a magnitude of common emitter small-signal forward current transfer ratio of 4.0 to 20 at 10 MHz and an output capacitance (Cobo) of 175 pF. Switching characteristics show a turn-on time (ton) of 0.44 μs and a turn-off time (toff) of 1.2 μs.
The transistor is housed in a TO-66 (TO-213AA) package, suitable for through-hole mounting. The operating and storage junction temperature range is from -65°C to +200°C, with a thermal resistance (junction-to-case) of 5.0°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N3879 transistor is 75 Vdc.
The continuous collector current (IC) rating for the 2N3879 is 7.0 Adc.
The total power dissipation (PT) for the 2N3879 at a case temperature of 25°C is 35 W.
The operating and storage junction temperature range for the 2N3879 is -65°C to +200°C.
The 2N3879 transistor is available in a TO-66 (TO-213AA) package.