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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,520 pcs
|
5520 pcs | On Request | 1 | On Request | On Request | 2011 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current | |
| Collector-Base Cutoff Current | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Voltage | |
| Emitter-Base Cutoff Current | |
| Emitter-Base Voltage | |
| I_CEX (Maximum @ V_CE=60 V, T_A=150 °C) | |
| I_CEX (Maximum @ V_CE=60 V, T_A=25 °C) | |
| Military Grade | |
| Mounting Type | |
| Operating Junction Temperature | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction-to-Ambient | |
| Total Power Dissipation | |
| Transistor Type | |
| V_BE(sat) (Maximum @ I_C=2.5 A, I_B=250 mA) | |
| V_BE(sat) (Minimum/Maximum @ I_C=1.5 A, I_B=150 mA) | |
| V_BE(sat) (Minimum/Maximum @ I_C=500 mA, I_B=50 mA) | |
| V_CE(sat) (Maximum @ I_C=1.5 A, I_B=150 mA) | |
| V_CE(sat) (Maximum @ I_C=2.5 A, I_B=250 mA) | |
| V_CE(sat) (Maximum @ I_C=500 mA, I_B=50 mA) | |
| Voltage | |
| hFE (Minimum @ I_C=2.5 A, V_CE=3 V) | |
| hFE (Minimum @ I_C=3.0 A, V_CE=5 V) | |
| hFE (Minimum @ I_C=500 mA, V_CE=1 V) | |
| hFE (Minimum @ I_C=500 mA, V_CE=1 V, T_A=-55 °C) | |
| hFE (Minimum/Maximum @ I_C=1.5 A, V_CE=2 V) | |
| hFE (Minimum/Maximum @ I_C=100 mA, V_CE=5 V, f=20 MHz) |
The 2N3868 is a PNP silicon low-power transistor rated for general-purpose switching and amplifier applications. It features a maximum collector-base voltage of 60 V, a maximum collector-emitter voltage of 60 V, and a maximum emitter-base voltage of 4 V. The device supports a continuous collector current of 3 A and dissipates up to 1 W at 25°C ambient temperature.
DC current gain is specified from 30 to 150 at a collector current of 1.5 A, with collector-emitter saturation voltage ranging from 0.5 V at 500 mA to 1.5 V at 2.5 A. The transistor is qualified per MIL-PRF-19500/350 in the datasheet, with JANTX, JANTXV, and JANS levels available for the 2N3868.
The 2N3868 is supplied in a through-hole TO-39 (TO-205AD) metal can package. It operates over a junction temperature range of -65°C to +200°C, and the thermal resistance from junction to ambient is 175°C/W. Power dissipation should be derated linearly above 25°C ambient.
The 2N3868 has a maximum collector-emitter voltage (V_CEO) of 60 V.
The 2N3868 is available in a through-hole TO-205AD (TO-39-3 metal can) package with a supplier device package of TO-39.
The maximum collector current is 3 A. Note that the datasheet text includes a unit discrepancy, and this value was interpreted from test conditions.
The operating and storage junction temperature range is -65°C to +200°C.
The product listing indicates RoHS3 compliant, but the status is not verified. Confirm with the manufacturer before ordering.
The DC current gain (hFE) is 30 to 150 at I_C=1.5 A and V_CE=2 V.
The collector-emitter saturation voltage is 0.5 V maximum at I_C=500 mA and I_B=50 mA.