| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,700 pcs
|
4700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Base Cutoff Current | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Cutoff Current | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Cutoff Current | |
| Emitter-Base Voltage | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Small-Signal Current Gain | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| dc_current_gain (Minimum @ Ic=2.5 A, Vce=3 V) | |
| dc_current_gain (Minimum @ Ic=3 A, Vce=5 V) | |
| dc_current_gain (Minimum @ Ic=500 mA, Vce=1 V) | |
| dc_current_gain (Minimum @ Ic=500 mA, Vce=1 V, Ta=-55 °C) | |
| vbe_saturation (Maximum @ Ic=2.5 A, Ib=250 mA) | |
| vbe_saturation (Maximum @ Ic=500 mA, Ib=50 mA) | |
| vbe_saturation (Minimum/Maximum @ Ic=1.5 A, Ib=150 mA) | |
| vce_saturation (Maximum @ Ic=1.5 A, Ib=150 mA) | |
| vce_saturation (Maximum @ Ic=500 mA, Ib=50 mA) |
The 2N3868 is a PNP silicon low power transistor manufactured by Microchip Technology, qualified per MIL-PRF-19500/350. It is designed for general-purpose switching and amplification applications requiring a through-hole package.
Key electrical specifications include a collector-emitter voltage (VCEO) of 60V, a collector current (IC) of 3mA, and a total power dissipation of 1W at 25°C ambient temperature, derated linearly at 5.71mW/°C above 25°C. The device offers a minimum DC current gain (hFE) of 35 at 500mA and 1V, and a maximum collector-emitter saturation voltage of 0.5V at 500mA and 50mA base current.
The transistor is housed in a TO-5 (TO-39) metal can package with through-hole mounting. It has an operating junction temperature range of -65°C to +200°C and a maximum thermal resistance junction-to-ambient of 175°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $22.36 | $22.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N3868 has a collector-emitter voltage (VCEO) of 60V.
The maximum collector current (IC) is 3mA.
The total power dissipation is 1W at 25°C ambient temperature, derated linearly at 5.71mW/°C above 25°C.
The 2N3868 is available in a through-hole TO-5 (TO-39) package.
The operating junction temperature range is -65°C to +200°C.
The minimum hFE is 35 at Ic=500mA and Vce=1V, and 30 at Ic=1.5A and Vce=2V.