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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N3867 is a PNP bipolar junction transistor manufactured by Microchip Technology. It features a collector-emitter breakdown voltage (Vceo) of 40V and a collector current rating of 3mA. With a power dissipation of 1W, this transistor is suitable for low-power switching and amplification applications.
The device offers a minimum DC current gain (hFE) of 40 at a collector current of 1.5A and Vce of 2V. The maximum Vce saturation voltage is 1.5V at a base current of 250mA and collector current of 2.5A. It is housed in a TO-5 through-hole package and can operate over a junction temperature range of -65°C to 200°C.
The transistor is designed for through-hole mounting, making it suitable for prototyping and applications requiring robust mechanical connections. The TO-5 package provides reliable thermal performance when properly heat-sinked. Compliance with RoHS3, REACH, and MSL level 1 is listed but unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $12.18 | $12.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V
TO-5 through-hole package
-65°C to 200°C junction temperature
Listed as RoHS3 compliant, but this is unverified.
3mA
1W
40 at 1.5A collector current and 2V Vce