| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3866A is an NPN silicon bipolar junction transistor designed for through-hole mounting in the TO-205AD/TO-39 metal can package. It offers a collector-emitter breakdown voltage (Vceo) of 30V and a maximum power dissipation of 5W, making it suitable for medium-power switching and amplification applications. The device operates over a wide temperature range from -65°C to 200°C, ensuring reliability in harsh environments.
Electrical characteristics include a minimum DC current gain (hFE) of 25 at a test condition of 50mA collector current and 5V collector-emitter voltage, and a maximum collector-emitter saturation voltage (Vce(sat)) of 1V at 20mA base current and 100mA collector current. The collector cutoff current (Icbo) is 100µA.
The part is supplied in the TO-39 package, which provides good thermal performance and mechanical durability. Compliance with RoHS3, REACH, and MSL Level 1 (unlimited) is claimed, though these certifications are unverified in the available documentation.
The 2N3866A operates from -65°C to 200°C.
The 2N3866A is available in the TO-205AD / TO-39-3 Metal Can package (TO-39).
The part is listed as RoHS3 compliant, though the status is unverified with low confidence.
The collector-emitter breakdown voltage is 30V.
The maximum power dissipation is 5W.
The minimum DC current gain is 25 at Ic=50mA and Vce=5V.