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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3866 is an NPN Silicon High Frequency Transistor manufactured by NXP Semiconductors. It is designed for high-frequency amplifier and oscillator applications.
Key electrical specifications include a Collector-Base Voltage (V CBO) of 55V, a Collector-Emitter Voltage (V CEO) of 30V, and a Continuous Collector Current (I C) of 0.4A. The transistor exhibits a minimum transition frequency (fT) of 500 MHz at 15V and 50mA.
This transistor is housed in a hermetically sealed TO-39 package. The operating and storage junction temperature range is -65 to +200 °C. Its thermal resistance (ΘJC) is 35 °C/W.
Applications for the 2N3866 include high-frequency amplification and oscillation circuits where its performance characteristics are beneficial.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (V CEO) for the 2N3866 is 30V.
The maximum Continuous Collector Current (I C) for the 2N3866 is 0.4A.
The minimum transition frequency (fT) for the 2N3866 is 500 MHz at 15V and 50mA.
The 2N3866 is supplied in a TO-39 package.
The operating and storage junction temperature range for the 2N3866 is -65 to +200 °C.