| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
29,500 pcs
|
29500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ST 2N3866 is an NPN silicon transistor designed for high-frequency amplifier and oscillator applications. It is housed in a hermetically sealed TO-39 package.
Key electrical characteristics include a Collector-Base Voltage (V CBO) of 55V and a Collector-Emitter Voltage (V CEO) of 30V. The continuous collector current (I C) is rated at 0.4A, and the continuous base current (I B) is 2.0A. The device offers a minimum transition frequency (fT) of 500 MHz at 15V and 50mA for the 2N3866 variant.
Maximum power dissipation is 5.0W at 25°C (TC). The operating and storage junction temperature range is -65°C to +200°C. Thermal resistance (ΘJC) is 35°C/W.
This transistor is suitable for various high-frequency applications where reliable performance is critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Base Voltage (V CBO) for the 2N3866 is 55V.
The maximum Collector-Emitter Voltage (V CEO) for the 2N3866 is 30V.
The continuous collector current (I C) for the 2N3866 is 0.4A.
The transition frequency (fT) for the 2N3866 is a minimum of 500 MHz at 15V and 50mA.
The 2N3866 is supplied in a TO-39 case.
The operating and storage junction temperature range for the 2N3866 is -65°C to +200°C.