| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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160 pcs
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160 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The 2N3866 is an NPN silicon bipolar junction transistor designed for general-purpose switching and amplification applications. It is housed in a TO-39 metal can package (also known as TO-205AD) and features through-hole mounting for reliable PCB integration.
Key electrical specifications include a maximum collector-emitter voltage (Vce) of 30V, a maximum collector current (Ic) of 100µA, and a minimum DC current gain (hFE) of 10 at 50mA collector current and 5V Vce. The collector-emitter saturation voltage is a maximum of 1V at 20mA base current and 100mA collector current.
The device can dissipate up to 5W of power and operates over a junction temperature range of -65°C to 200°C. The TO-39 metal can package provides robust thermal performance and mechanical durability, making it suitable for industrial and military-grade environments.
The maximum collector-emitter voltage is 30V.
The 2N3866 is available in a TO-205AD, TO-39-3 Metal Can package, with the supplier device package being TO-39.
The operating junction temperature range is -65°C to 200°C.
The part is listed as RoHS3 Compliant, but this status is unverified and should be confirmed with the manufacturer.
The minimum DC current gain (hFE) is 10 at Ic=50mA and Vce=5V.
The maximum collector-emitter saturation voltage is 1V at Ib=20mA and Ic=100mA.
The maximum power dissipation is 5W.