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2N3859A

The 2N3859A is a silicon NPN transistor from Texas Instruments, designed for general purpose amplifier and switching applications. It is housed in a TO-92 package.

✓ Total Stock: 400 pcs

$ Price Range: $0.09

2N3859A Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Bristol Electronics ✓ Non-Authorised Inventory information	400 pcs On Request	400 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

2N3859A Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Texas Instruments

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2N3859A Description

Short technical summary and product information.

The 2N3859A is a silicon NPN transistor manufactured by Texas Instruments, suitable for general-purpose amplification and switching tasks. This component features a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of up to 100mA. Its transition frequency (fT) ranges from 90MHz to 250MHz under typical test conditions.

The transistor is supplied in a TO-92 package, designed for through-hole mounting. Key electrical characteristics include a DC current gain (hFE) between 100 and 200 at IC=2.0mA and VCE=4.5V. The maximum power dissipation is rated at 625mW at ambient temperature and 1.5W at 25°C case temperature. Operating and storage junction temperatures are specified from -65°C to +150°C.

This device offers a collector-base voltage (VCBO) and collector-emitter voltage (VCEO) of 60V, and an emitter-base voltage (VEBO) of 6.0V. Saturation voltages are also specified, with VCE(SAT) at a maximum of 125mV and VBE(SAT) at a maximum of 780mV under specific test conditions. Thermal resistance is noted as 200°C/W for junction-to-ambient (θJA) and 83.3°C/W for junction-to-case (θJC).

2N3859A Quick Information

Product Type: NPN Transistor

Canonical Name: 2N3859A NPN Transistor

Subcategory: Single

2N3859A Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

2N3859A Estimated Pricing

Qty	Low	High
1+	$0.09	$0.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N3859A Features

Silicon NPN transistor for general applications.
60V collector-emitter voltage rating.
100mA continuous collector current.
Up to 250MHz transition frequency.
TO-92 package for through-hole mounting.

2N3859A Applications

Low-power general-purpose amplification circuits.
Switching loads up to 100mA at 60V.
Signal processing in audio and control systems.
Driver stage in small-signal analog designs.
Prototyping and breadboard-based projects.

2N3859A FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum operating voltage of the 2N3859A?

The maximum collector-emitter voltage (VCEO) is 60V, and the maximum collector-base voltage (VCBO) is also 60V.

What package type does the 2N3859A use?

The 2N3859A is available in a TO-92 package with through-hole mounting.

What is the operating temperature range of the 2N3859A?

The operating and storage junction temperature range is -65°C to +150°C.

What is the DC current gain (hFE) of the 2N3859A?

At V_CE=4.5V and I_C=2mA, the DC current gain ranges from 100 to 200. At V_CE=1.0V and I_C=10mA, the minimum is 100.

What is the transition frequency of the 2N3859A?

The transition frequency (fT) ranges from 90 MHz to 250 MHz under test condition V_CE=10V, I_C=2mA.

What is the collector-emitter saturation voltage of the 2N3859A?

The maximum VCE(SAT) is 125mV when I_C=10mA and I_B=1mA.

What is the maximum continuous collector current for the 2N3859A?

The maximum continuous collector current (IC) is 100mA.