| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
87,600 pcs
|
87600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
48 pcs
|
48 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
20 pcs
|
20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current Rating (Amps) | |
| Mounting Type | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The 2N3819 is a silicon N-Channel JFET from Central Semiconductor, designed for RF amplifier and mixer applications. It is housed in a TO-92 through-hole package with a lead code of 1 Drain, 2 Gate, 3 Source.
Key electrical characteristics include a maximum drain-source voltage (VDS) of 25V, a drain current (IDSS) range of 2.0 to 20 mA at VDS=15V, and a forward transconductance (|Yfs|) of 2.0 to 6.5 mS at 1 MHz. The device also features low input capacitance (Ciss) of 8.0 pF typical and reverse transfer capacitance (Crss) of 4.0 pF typical, making it suitable for high-frequency circuits.
The 2N3819 operates over a junction temperature range of -65°C to +150°C and has a maximum power dissipation of 360 mW. It is commonly used in RF amplifier stages, mixers, and other analog switching applications.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.60 | $0.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 25V.
The drain current (IDSS) ranges from 2.0 to 20 mA at VDS=15V.
The 2N3819 is available in a TO-92 through-hole package.
The operating junction temperature range is -65°C to +150°C.
RoHS compliance is unverified; the datasheet does not explicitly state RoHS status.