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2N3819 The 2N3819 is an N-Channel JFET designed for RF amplifier and mixer applications, featuring a 25V drain-source voltage, 360mW power dissipation, and a through-hole TO-92 package.
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2N3819

Available from 1 distributors
Mfr Name: NTE Electronics
NTE Electronics
The 2N3819 is an N-Channel JFET designed for RF amplifier and mixer applications, featuring a 25V drain-source voltage, 360mW power dissipation, and a through-hole TO-92 package.
✓ Total Stock: 2,524 pcs

2N3819 Available from 1 distributor

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Components Technology Group, Inc. ✓
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2,524 pcs
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2N3819 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Configuration
Input Capacitance
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Power Dissipation
Storage Temperature
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2N3819 Description

Short technical summary and product information.

The 2N3819 is a silicon N-Channel JFET designed for RF amplifier and mixer applications. It has a maximum drain-source voltage of 25V and a maximum continuous gate current of 10mA. The device features a drain-source saturation current (IDSS) range of 2.0 to 20mA at VDS=15V, and a gate-source cutoff voltage (VGS(OFF)) of up to 8.0V. Forward transconductance (|Yfs|) is 2.0 to 6.5mS at 1.0MHz and a minimum of 1.6mS at 100MHz. Input capacitance (Ciss) is a maximum of 8.0pF and reverse transfer capacitance (Crss) is a maximum of 4.0pF.

 

The device is housed in a through-hole TO-92 package (TO-226-3, TO-92-3) with a lead code of drain, gate, source. The operating and storage junction temperature range is -65°C to +150°C. This JFET is well-suited for low-noise RF amplifier and mixer circuits in applications such as radios, communications equipment, and test instrumentation.

2N3819 Quick Information

Product Type: JFET
Canonical Name: 2N3819 N-Channel JFET
Subcategory: RF JFET

2N3819 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N3819 Features

  • N-Channel JFET design for RF use.
  • Rated for 25V drain-source voltage.
  • 360mW maximum power dissipation.
  • Low input capacitance of 8.0pF.
  • Through-hole TO-92 package.

2N3819 Applications

  • RF amplifier circuits up to 100MHz.
  • Mixer circuits in communications gear.
  • Low-noise analog front-end designs.
  • Signal switching and attenuation applications.

2N3819 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the 2N3819?

The maximum drain-source voltage is 25 V.

What package does the 2N3819 come in?

The 2N3819 is available in a through-hole TO-92 package (TO-226-3, TO-92-3).

What is the operating temperature range of the 2N3819?

The operating and storage junction temperature range is -65°C to +150°C.

What is the power dissipation of the 2N3819?

The maximum power dissipation is 360 mW.

What is the gate-source cutoff voltage of the 2N3819?

The maximum gate-source cutoff voltage is 8.0 V at VDS=15V and ID=2.0nA.

What is the input capacitance of the 2N3819?

The maximum input capacitance is 8.0 pF at VDS=15V, VGS=0, and f=1.0MHz.

Is the 2N3819 RoHS compliant?

RoHS status is listed as RoHS3 Compliant, but this is unverified.

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