Mfr Part #:

2N3811

Mfr Name: SP

The SP 2N3811 is a PNP silicon dual transistor designed for various electronic applications. It offers a collector-emitter voltage of up to 60V.

✓ Total Stock: 24 pcs

$ Price Range: $0.77

2N3811 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Partservice ✓ Non-Authorised Inventory information	24 pcs On Request	24 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

2N3811 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	SP

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2N3811 Description

Short technical summary and product information.

The SP 2N3811 is a PNP silicon dual transistor housed in a TO-78 package. It is qualified per MIL-PRF-19500/336 and offers a maximum collector-emitter voltage (VCEO) of 60 Vdc and a maximum collector current (IC) of 50 mAdc for a single section.

This transistor operates over a wide junction temperature range of -65°C to +200°C. Key electrical characteristics include a collector-base breakdown voltage of 60 Vdc and an emitter-base breakdown voltage of 5.0 Vdc. The forward current transfer ratio (hFE) varies with collector current, ranging from 75 to 450 for the 2N3811 variant under specified conditions.

Dynamic characteristics include a forward current transfer ratio magnitude of 1.0 at 30 MHz and 100 MHz. The output capacitance (Cobo) is a maximum of 5.0 pF, and the input capacitance (Cibo) is a maximum of 8.0 pF. The transistor is suitable for applications requiring stable performance across a broad temperature spectrum.

2N3811 Quick Information

Product Type: Transistor

Canonical Name: 2N3811 PNP Silicon Dual Transistor

Subcategory: Single, Pre-Biased

2N3811 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

2N3811 Estimated Pricing

Qty	Low	High
1+	$0.77	$0.77

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N3811 Features

PNP silicon dual transistor.
60V collector-emitter voltage.
50mA maximum collector current.
Wide -65°C to +200°C operating range.
TO-78 package.

2N3811 Applications

Suitable for general amplification.
Used in signal processing circuits.
Applicable for switching functions.
Designed for high-temperature environments.

2N3811 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage for the 2N3811?

The maximum collector-emitter voltage (VCEO) for the 2N3811 is 60 Vdc.

What is the maximum collector current of the 2N3811?

The maximum collector current (IC) for a single section of the 2N3811 is 50 mAdc.

What is the operating temperature range for the 2N3811 transistor?

The operating and storage junction temperature range for the 2N3811 is -65°C to +200°C.

What package type is the 2N3811 supplied in?

The 2N3811 is supplied in a TO-78 package.

What is the forward current transfer ratio (hFE) for the 2N3811 at 100 μAdc?

The minimum forward current transfer ratio (hFE) for the 2N3811 at IC = 100 μAdc and VCE = 5.0 Vdc is 225.

What is the output capacitance of the 2N3811?

The output capacitance (Cobo) of the 2N3811 is a maximum of 5.0 pF under the condition VCB = 5.0 Vdc, IE = 0, and frequency between 100 kHz and 1.0 MHz.