DL4742A T/R
DC
The DL4742A T/R is a Zener Diode from Rectron Semiconductor Inc. with a nominal Zener voltage of 12V and a power dissipation of 1W.
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | 99+ | On Request | On Request |
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The 2N3792 is a silicon PNP power transistor manufactured by MOSPEC, designed for medium-speed switching and amplifier applications. It features a TO-3 package, making it suitable for applications requiring robust thermal performance.
Key electrical specifications include a collector-base voltage (VCBO) of -80V and a collector-emitter voltage (VCEO) of -80V. The device can handle a continuous collector current (IC) of up to 10A and a base current (IB) of up to 4A. The power dissipation is rated at 150W at a case temperature of 25°C, with a junction temperature up to 200°C. Thermal resistance from junction to case is 1.17°C/W.
Saturation voltage (VCE(sat)) is typically -1V at IC=-5A and IB=-0.5A. DC current gain (hFE) ranges from 50 to 180 at IC=-1A and VCE=-2V. The transition frequency (fT) is 4MHz under specified conditions.
The transistor is designed for through-hole mounting. Its operating temperature range is from -65°C to 200°C. The 2N3792 is a complement to the 2N3715 and 2N3716 types.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-base voltage (VCBO) for the 2N3792 is -80V.
The maximum continuous collector current (IC) for the 2N3792 is 10A.
The 2N3792 transistor uses a TO-3 package.
The 2N3792 transistor can operate within a temperature range of -65°C to 200°C.
The collector-emitter saturation voltage (VCE(sat)) is typically -1V when the collector current is -5A and the base current is -0.5A.
The DC current gain (hFE) at IC=-1A and VCE=-2V ranges from 50 to 180.
The transition frequency (fT) of the 2N3792 is 4MHz under the test conditions of IC=-0.5A and VCE=-10V.
