2N3792

The 2N3792 is a PNP high power silicon transistor designed for demanding switching and amplification applications. It is qualified per MIL-PRF-19500/379 and available in JAN, JANTX, and JANTXV levels, ensuring reliability for military and aerospace use.

Key electrical specifications include a maximum collector-emitter voltage (Vceo) of 80V, a maximum collector current (Ic) of 10A, and a base current rating of 4A. The device offers a DC current gain (hFE) ranging from 50 to 150 at Ic=1A and Vce=2V, with a maximum collector-emitter saturation voltage of 1V at Ic=5A and Ib=0.5A. Power dissipation is rated at 85.7W at case temperature 100°C and 5W at ambient temperature 25°C, with a junction-to-case thermal resistance of 1.17°C/W.

The transistor operates over a junction temperature range of -65°C to 200°C, making it suitable for high-temperature environments. Its TO-3 (TO-204AA) metal package provides excellent thermal performance and is designed for through-hole mounting, facilitating robust mechanical attachment and heat sinking.

Typical applications include power switching circuits, linear amplifiers, and motor control systems where high current and voltage handling are required. The device's high power dissipation capability and military qualification make it a dependable choice for industrial and defense electronics.