| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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38 pcs
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38 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3791 is a silicon epitaxial-base PNP power transistor manufactured by STMicroelectronics, housed in a TO-3 metal case. This component is engineered for robust performance in power linear and switching applications.
Key electrical characteristics include a maximum collector current of 10A and a maximum base current of 4A. It can handle a total device dissipation of 150 Watts at a case temperature of 25°C. The junction temperature can reach up to 200°C, with storage temperatures ranging from -65°C to +200°C.
Thermal management is supported by a low thermal resistance from junction to case of 1.17°C/W. The transistor offers a collector-emitter sustaining voltage of up to 60V (VCEO(SUS)) under specific conditions and an emitter-base voltage rating of 7V.
Designed for through-hole mounting, the 2N3791 is suitable for applications requiring reliable power handling capabilities. Its complementary NPN type is the 2N3713 series.
| Qty | Low | High |
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2N3791 is 10A.
The total device dissipation for the 2N3791 is 150 Watts at a case temperature of 25°C.
The storage temperature range for the 2N3791 is -65°C to +200°C, and the maximum junction temperature is 200°C.
The 2N3791 transistor is supplied in a TO-3 metal case.