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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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957 pcs
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957 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N3791 is a PNP bipolar junction transistor manufactured by Microchip Technology. It is designed for general-purpose switching and amplification applications requiring moderate to high current handling.
Key electrical specifications include a collector-emitter voltage (Vceo) of 60V, a continuous collector current (Ic) of 10A, and a power dissipation (Pd) of 5W. The device offers a minimum DC current gain (hFE) of 30 at Ic=3A and Vce=2V, and a maximum collector-emitter saturation voltage (Vce(sat)) of 2.5V at Ib=2A and Ic=10A.
The transistor is housed in a TO-3 (TO-204AA) metal can package with through-hole mounting, suitable for socket or direct solder attachment to a heatsink. The junction operating temperature range is -65°C to 200°C, allowing use in demanding thermal environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $44.55 | $44.55 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N3791 is a PNP bipolar junction transistor.
The maximum collector-emitter voltage is 60V.
The maximum continuous collector current is 10A.
The power dissipation is 5W.
The 2N3791 is available in a TO-3 (TO-204AA) through-hole package.
The junction operating temperature range is -65°C to 200°C.
The minimum DC current gain is 30 at Ic=3A and Vce=2V.