| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3789 is a PNP silicon power transistor manufactured by ST. It is designed for high-reliability applications and is available screened per MIL-PRF-19500, JANTX level.
Key electrical specifications include a collector-base voltage (VCBO) of 60V and a collector-emitter voltage (VCEO) of 60V. The continuous collector current (IC) is rated at 10A, with a continuous base current (IB) of 4A. Power dissipation (PD) is 150W at 25°C, derating at 0.857W/°C. The operating and storage junction temperature range is -65°C to +200°C.
This transistor features a thermal resistance (junction to case) of 1.17°C/W. Electrical characteristics include a DC current gain (hFE) ranging from 25-50 at IC=1A, VCE=2V, and 15-30 at IC=3A, VCE=2V. The collector emitter saturation voltage (VCE(sat)) is a maximum of 1.0V. The current gain bandwidth product (fT) is 4.0 MHz at IC=1A, VCE=10V.
The 2N3789 is housed in a TO-3 case, suitable for through-hole mounting. It is available in non-RoHS (Sn/Pb plating) and RoHS compliant versions (by adding "-PBF" suffix).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the 2N3789 is 60V.
The continuous collector current (IC) for the 2N3789 is 10A.
The operating and storage junction temperature range is -65°C to +200°C.
The 2N3789 is supplied in a TO-3 case.
