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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3773 is a high-power NPN bipolar junction transistor (BJT) from Motorola Semiconductor, designed for power switching applications. It comes in a TO-3 through-hole package, facilitating robust thermal management and ease of mounting.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 140V and a continuous collector current of 16A. The transistor exhibits a minimum DC current gain (Hfe) of 15 and a maximum power dissipation of 150W. Its typical gain bandwidth product (fT) is 4 MHz.
Operating across a wide temperature range from -65°C to +150°C, the 2N3773 is suitable for demanding environments. The collector-emitter saturation voltage is a maximum of 1.4V, ensuring efficient power transfer in switching circuits.
This component is classified under Bipolar Transistors - BJT, single. Its through-hole mounting style makes it ideal for applications requiring reliable connections and heat dissipation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum DC collector current is 16 A.
The maximum collector-emitter voltage (VCEO) is 140 V.
The maximum collector-base voltage (VCBO) is 160 V.
The maximum emitter-base voltage (VEBO) is 7 V.
The maximum power dissipation is 150 W.
The operating temperature range is -65°C to +150°C.
The 2N3773 is available in a TO-3 through-hole package.