| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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93 pcs
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93 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3772 is a high-power NPN silicon transistor manufactured by NTE Electronics. It is designed for use in linear amplifiers, series pass regulators, and inductive switching applications. The transistor features a collector-emitter voltage (VCEO) of 60V, collector-base voltage (VCB) of 100V, and emitter-base voltage (VEB) of 7V.
With a continuous collector current rating of 20A (30A peak) and a base current of 5A (15A peak), the 2N3772 can handle high-power loads. The maximum power dissipation is 150W at a case temperature of 25°C, derating at 0.855W/°C above 25°C. The DC current gain (hFE) ranges from 15 to 60 at 10A/4V, and the collector-emitter saturation voltage is as low as 1.4V at 10A/1A base current.
The transistor is housed in a TO-204AA (TO-3) through-hole package, which provides excellent thermal performance. The operating and storage junction temperature range is -65°C to 200°C, and the thermal resistance from junction to case is 1.17°C/W. The transition frequency is 0.2 MHz, making it suitable for moderate-frequency applications.
The maximum collector-emitter voltage (VCEO) is 60V.
The 2N3772 is available in a TO-204AA (TO-3) through-hole package.
The operating and storage junction temperature range is -65°C to 200°C.
The 2N3772 is listed as RoHS3 compliant, but this is unverified.
The continuous collector current is 20A, with a peak of 30A.
The maximum power dissipation is 150W at a case temperature of 25°C.
The DC current gain ranges from 15 to 60 at 10A collector current and 4V collector-emitter voltage.