| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
80,000 pcs
|
80000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3771 is a high power NPN silicon power transistor designed for linear amplifiers, series pass regulators, and inductive switching applications. It features a forward biased second breakdown current capability of 3.75 Adc at VCE=40Vdc. The device is rated for a maximum collector-emitter voltage of 40V, continuous collector current of 30A, and power dissipation of 150W at case temperature 25°C. The transistor is housed in a TO-204AA (TO-3) through-hole package, offering excellent thermal performance with a junction-to-case thermal resistance of 1.17°C/W. The operating junction temperature range is -65 to +200°C. This device is Pb-Free and RoHS compliant.
40V maximum.
30A continuous.
150W at case temperature 25°C.
-65°C to +200°C.
TO-204AA (TO-3) through-hole package.
Yes, RoHS3 compliant per datasheet (unverified).
Minimum hFE of 15 at Ic=15A, Vce=4V.