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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N3767 is an NPN bipolar junction transistor manufactured by Microchip Technology. It features a minimum collector-emitter breakdown voltage of 80V and a maximum collector current of 500µA. Power dissipation is rated at 25W, with a DC current gain (hFE) of at least 40 at 500mA collector current and 5V Vce. The Vce saturation voltage is 2.5V maximum at 100mA base current and 1A collector current.
The device is housed in a TO-66 (TO-213AA) through-hole package, suitable for mounting on printed circuit boards. It operates over a junction temperature range of -65°C to 200°C. The 2N3767 is designed for general-purpose switching and amplification applications where moderate voltage and low current are required. Note that the collector current rating appears low relative to the power dissipation; verification with the official datasheet is recommended for accurate ratings.
Minimum collector-emitter breakdown voltage is 80V.
TO-213AA, TO-66-2 (supplier device package TO-66).
-65°C to 200°C (junction).
RoHS status is unverified; internal database indicates RoHS3 compliant but a distributor lists it as non-compliant. Verify with manufacturer.
NPN.
25 watts maximum.
Minimum 40 at 500mA collector current and 5V Vce.