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2N3766 The SESCOCEM 2N3766 is an NPN power transistor designed for power amplifier and medium speed switching applications. It features a TO-66 package.
Mfr Part #:

2N3766

Available from 1 distributors
Mfr Name: SESCOCEM
SESCOCEM
The SESCOCEM 2N3766 is an NPN power transistor designed for power amplifier and medium speed switching applications. It features a TO-66 package.
✓ Total Stock: 16 pcs
$ Price Range: $1.93

2N3766 Available from 1 distributor

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2N3766 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type
Power Dissipation
Tape & Reel
Thermal Resistance
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2N3766 Description

Short technical summary and product information.

The SESCOCEM 2N3766 is a silicon NPN power transistor manufactured using an epitaxial base process. It is designed for applications such as power amplifiers and medium-speed switching.

 

Key electrical characteristics include a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 4A. The device has a maximum power dissipation (PD) of 25W and a thermal resistance (junction-to-case) of 7.0°C/W.

 

This transistor is housed in a TO-66 package, suitable for through-hole mounting. It operates within a junction temperature range of -65°C to +200°C.

 

The 2N3766 offers a DC current gain (hFE) ranging from 40-160 at 5V CE and 500mA IC. Other specifications include a collector-base voltage (VCBO) of 80V and an emitter-base voltage (VEBO) of 6.0V.

2N3766 Quick Information

Product Type: NPN Power Transistor
Canonical Name: 2N3766 NPN Power Transistor
Subcategory: Power Transistor

2N3766 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N3766 Estimated Pricing

Qty Low High
1+ $1.93 $1.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N3766 Features

  • NPN power transistor for amplifier applications.
  • 60V collector-emitter voltage (VCEO).
  • 4A continuous collector current (IC).
  • 25W maximum power dissipation (PD).
  • TO-66 through-hole package.

2N3766 Applications

  • Suitable for high-voltage switching circuits
  • Used in power amplification applications
  • Ideal for high-temperature environments
  • Designed for through-hole PCB mounting

2N3766 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the 2N3766?

The maximum collector-emitter voltage (VCEO) for the 2N3766 is 60V.

What is the continuous collector current rating of the 2N3766?

The continuous collector current (IC) for the 2N3766 is 4.0A.

What is the power dissipation of the 2N3766 transistor?

The maximum power dissipation (PD) for the 2N3766 is 25W.

What is the operating temperature range for the 2N3766?

The operating and storage junction temperature range for the 2N3766 is -65°C to +200°C.

What package type is the 2N3766 supplied in?

The 2N3766 is supplied in a TO-66 case.

What is the DC current gain (hFE) of the 2N3766 at 5V CE and 500mA IC?

The DC current gain (hFE) for the 2N3766 at 5V CE and 500mA IC ranges from 40 to 160.

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