| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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106 pcs
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106 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Motorola Semiconductor 2N3766 is a silicon NPN power transistor manufactured using the epitaxial base process. It is designed for applications requiring power amplification and medium-speed switching.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 4A. The device has a maximum power dissipation (PD) of 25W and a thermal resistance (Theta JC) of 7.0 °C/W. The operating and storage junction temperature range is -65 to +200 °C.
This transistor is housed in a TO-66 package, suitable for through-hole mounting. The datasheet specifies a continuous base current (IB) of 2A and various hFE values depending on test conditions. Output capacitance (Cob) is rated at 50 pF.
The 2N3766 is part of a series that includes the 2N3767, offering different voltage ratings. The device is marked with its full part number.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N3766 is 60V.
The continuous collector current (IC) for the 2N3766 is 4A.
The maximum power dissipation (PD) for the 2N3766 is 25W.
The operating and storage junction temperature range for the 2N3766 is -65 to +200 °C.
The 2N3766 is supplied in a TO-66 package.
The typical thermal resistance (Theta_JC) for the 2N3766 is 7 °C/W.
The minimum DC current gain (hFE) for the 2N3766 at VCE=10V, IC=1.0A is 20.