| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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248 pcs
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248 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Industrial Grade | |
| Lead Style | |
| Power Dissipation | |
| SVHC Present | |
| Thermal Resistance |
The 2N3766 is a silicon NPN power transistor manufactured by Solid State Devices Inc. using an epitaxial base process. It is designed for applications such as power amplifiers and medium-speed switching.
Key electrical specifications include a maximum Collector-Emitter Voltage (VCEO) of 60V and a continuous Collector Current (IC) of 4.0A. The device can dissipate up to 25W of power at 25°C (TC). It operates over a wide temperature range from -65°C to +200°C.
The transistor is housed in a TO-66 package. The datasheet indicates a thermal resistance (Theta JC) of 7.0°C/W. The sleeve packing quantity is 30 units, and the device has an average mass of 5.84g.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N3766 is packaged in a TO-66 case.
The 2N3766 can operate and be stored within a junction temperature range of -65 to +200 °C.
The maximum Collector-Base Voltage (V_CBO) for the 2N3766 is 80 V.
The maximum continuous collector current (I_C) for the 2N3766 is 4.0 A.
The maximum power dissipation (P_D) for the 2N3766 is 25 W.
The typical transition frequency (f_T) for the 2N3766 is 10 MHz.