| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Power Dissipation | |
| SVHC Present | |
| Tape & Reel | |
| Thermal Resistance |
The CENTRAL SEMICONDUCTOR 2N3766 and 2N3767 are silicon NPN power transistors manufactured by the epitaxial base process. They are designed for power amplifier and medium speed switching applications.
Key electrical specifications include a Collector-Emitter Voltage (VCEO) of 60V and a Continuous Collector Current (IC) of 4.0A. The device can dissipate up to 25W of power. The operating and storage junction temperature range is -65 to +200 °C.
This transistor is housed in a TO-66 case. The datasheet indicates a thermal resistance (junction-to-case) of 7.0 °C/W. The standard package quantity is 30 units, supplied in a sleeve.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the 2N3766 is 60 V.
The maximum Continuous Collector Current (IC) for the 2N3766 is 4 A.
The power dissipation rating (PD) for the 2N3766 is 25 W.
The operating and storage junction temperature range for the 2N3766 is -65 to +200 °C.
The 2N3766 is supplied in a TO-66 case.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.