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5,500 pcs
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5500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3763 is a PNP bipolar junction transistor manufactured by Microchip Technology. It is designed for general-purpose switching and amplification applications requiring a through-hole package.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 60V, a maximum collector current of 1.5A, and a maximum power dissipation of 500mW. The device offers a minimum DC current gain (hFE) of 20 at 1.5A collector current and 5V collector-emitter voltage. The maximum collector-emitter saturation voltage is 900mV at a base current of 100mA and collector current of 1A.
The transistor is housed in a TO-205AD / TO-39-3 Metal Can package, with a supplier device package designation of TO-39. It supports through-hole mounting and operates over a temperature range of -55°C to 200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $28.99 | $28.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N3763 is a PNP bipolar junction transistor.
The maximum collector-emitter breakdown voltage (Vce) is 60V.
The maximum collector current (Ic) is 1.5A.
The maximum power dissipation is 500mW.
The 2N3763 is available in a TO-205AD / TO-39-3 Metal Can package (TO-39).
The operating temperature range is -55°C to 200°C.
The minimum DC current gain (hFE) is 20 at Ic=1.5A and Vce=5V.