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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N3762 is a PNP bipolar junction transistor designed for general purpose switching and amplification applications. It features a maximum collector-emitter voltage (Vce) of 40V and a maximum collector current (Ic) of 1.5A, with a power dissipation of 1W. The DC current gain (hFE) is a minimum of 30 at Ic=1A and Vce=1.5V, and the collector-emitter saturation voltage is 900mV maximum at Ib=100mA and Ic=1A. The transistor is housed in a through-hole TO-205AD (TO-39) metal can package, suitable for a wide operating temperature range from -55°C to 200°C. This device is RoHS3 compliant and has an MSL of 1 (unlimited). It is commonly used in switching circuits, driver stages, and linear amplification where moderate power handling is required.
| Qty | Low | High |
|---|---|---|
| 100+ | $28.99 | $28.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
TO-205AD (TO-39) metal can, through-hole.
-55°C to 200°C (junction).
Yes, it is RoHS3 compliant (unverified).
Minimum 30 at Ic=1A, Vce=1.5V.
Maximum 900mV at Ib=100mA, Ic=1A.
1.5A.