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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3737 from Microsemi Corporation is a Silicon NPN Transistor suitable for RF applications. This component features a maximum collector current of 1.5A and a collector base voltage of 75V. The maximum power dissipation is rated at 500mW, and it can operate within a temperature range of -65°C to 200°C.
Packaged in a TO-46-3 case, the 2N3737 is designed for through-hole mounting. Its specifications make it a versatile component for various electronic circuits requiring reliable NPN transistor performance in RF environments.
This transistor is part of the broader category of Bipolar Junction Transistors (BJTs), specifically tailored for radio frequency applications. Its robust operating temperature range and electrical characteristics support demanding applications.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2N3737 is 1.5A.
The collector base voltage for the 2N3737 is 75V.
The maximum power dissipation for the 2N3737 is 500mW.
The 2N3737 operates within a temperature range of -65°C to 200°C.
The 2N3737 is in a TO-46-3 package.
The 2N3737 is a through-hole mount type.