| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,469 pcs
|
25469 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N3737 is an NPN bipolar junction transistor manufactured by Microchip Technology. Designed for general purpose switching and amplification applications, it features a maximum collector-emitter voltage of 40V and a continuous collector current rating of 1.5A. Power dissipation is specified at 500mW.
DC current gain (hFE) is a minimum of 20 at a test condition of 1A collector current and 1.5V collector-emitter voltage. The collector-emitter saturation voltage is rated at a maximum of 900mV when driven with a 100mA base current and 1A collector current, ensuring efficient low-voltage operation. The device operates over a junction temperature range of -65°C to 200°C.
Housed in a TO-206AB / TO-46-3 metal can package, the 2N3737 supports through-hole mounting. The TO-46-3 hermetically sealed package provides robust environmental protection suitable for demanding industrial and military applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $14.04 | $14.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) is 40 V.
The maximum continuous collector current (Ic) is 1.5 A.
The 2N3737 is supplied in a TO-206AB / TO-46-3 metal can through-hole package.
The operating junction temperature range is -65°C to 200°C.
The maximum power dissipation is 500 mW.
RoHS compliance status is unverified; there is a conflict between existing data (RoHS3 compliant) and distributor indication (non-compliant).