| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,500 pcs
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3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The 2N3735 is a single NPN bipolar junction transistor manufactured by Microchip Technology. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 40V, a maximum collector current of 1.5A, and a maximum power dissipation of 1W. The device offers a minimum DC current gain (hFE) of 20 at 1A collector current and 1.5V collector-emitter voltage. The maximum collector-emitter saturation voltage is 900mV at a base current of 100mA and collector current of 1A.
The transistor is housed in a through-hole TO-205AD (TO-39-3) metal can package, also referred to as TO-39 (TO-205AD). It supports an operating junction temperature range of -65°C to 200°C, making it suitable for demanding thermal environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $14.38 | $14.38 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage (Vceo) is 40V.
The maximum collector current (Ic) is 1.5A.
The 2N3735 is available in a TO-205AD (TO-39-3) metal can package, also known as TO-39 (TO-205AD).
The operating junction temperature range is -65°C to 200°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified and there is a conflict between sources.