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2N3725 2N3725 is an NPN bipolar junction transistor from Texas Instruments. It features a maximum collector-emitter voltage of 50V and collector current of 1A, with a TO-5 through-hole package.
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2N3725

Available from 2 distributors
Mfr Name: Texas Instruments
Texas Instruments
2N3725 is an NPN bipolar junction transistor from Texas Instruments. It features a maximum collector-emitter voltage of 50V and collector current of 1A, with a TO-5 through-hole package.
✓ Total Stock: 10,335 pcs

2N3725 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
10,300 pcs
On Request
10300 pcs On Request 1 On Request On Request On Request On Request On Request
Partservice ✓
Non-Authorised Inventory information
35 pcs
On Request
35 pcs On Request 1 On Request On Request On Request On Request On Request
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2N3725 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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2N3725 Description

Short technical summary and product information.

The 2N3725 is an NPN bipolar junction transistor (BJT) manufactured by Texas Instruments. It is designed for general purpose switching and amplification applications in low to medium power circuits.

 

Electrical characteristics include a maximum collector-emitter voltage (Vce) of 50V, a maximum collector current (Ic) of 1A, and a power dissipation (Pd) of 800mW. The DC current gain (hFE) has a minimum value of 60 at Ic=100mA and Vce=1V. The collector-emitter saturation voltage (Vce(sat)) is 950mV maximum at Ib=100mA and Ic=1A.

 

The transistor is housed in a TO-5 metal can package (TO-205AA, TO-5-3) with through-hole mounting, suitable for socket or direct soldering on printed circuit boards. The metal can provides good thermal performance for the power dissipation level.

 

Typical applications include driver stages, switching loads, and signal amplification where moderate voltage and current handling is required. The part is listed as RoHS3 compliant (unverified) and has an MSL rating of 1 (unlimited).

2N3725 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2N3725 NPN Bipolar Transistor, 50V Vce, 1A Ic, TO-5
Subcategory: Single

2N3725 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

2N3725 Features

  • NPN bipolar junction transistor.
  • Rated for 50V collector-emitter voltage.
  • Maximum collector current of 1A.
  • Power dissipation up to 800mW.
  • Through-hole TO-5 metal can package.

2N3725 Applications

  • General purpose switching circuits.
  • Signal amplification in audio applications.
  • Driver stages in power supplies.
  • Suitable for low to medium power designs.

2N3725 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

50V.

What is the maximum collector current?

1A.

What is the power dissipation?

800mW.

What is the minimum DC current gain?

60 at Ic=100mA, Vce=1V.

What is the collector-emitter saturation voltage?

950mV maximum at Ib=100mA, Ic=1A.

What is the package type?

TO-5 through-hole metal can package (TO-205AA, TO-5-3).

Is the 2N3725 RoHS compliant?

RoHS3 compliant (unverified).

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