| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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207 pcs
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207 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The 2N3724 is an NPN Silicon Medium Power Transistor manufactured by New Jersey Semiconductor. This series includes variants like the 2N3724A and 2N3725(A) offering different voltage and current ratings.
Key electrical characteristics include collector-emitter breakdown voltages (VCEO) of up to 50V for the 2N3724 and 2N3724A, and up to 80V for the 2N3725 and 2N3725A. The continuous collector current (IC) can reach up to 0.5A for the 2N3724/2N3725 and 1.2A for the 2N3724A/2N3725A. The static forward current transfer ratio (hFE) varies depending on the specific part number and test conditions, with values ranging from 20 to 150.
Maximum power dissipation is rated at 0.8W in free air for the 2N3724/2N3725 and 1W for the 2N3724A/2N3725A. Dissipation increases to 3.5W (2N3724/2N3725) and 5W (2N3724A/2N3725A) when measured at the case temperature. The storage temperature range is from -65°C to +200°C.
These transistors are available in high-reliability screened versions per MIL-PRF-19500, JANTX level, by adding an 'HR' suffix. They are also offered in non-RoHS (Sn/Pb plating) and RoHS compliant versions by adding a '-PBF' suffix.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50V minimum at 10µA collector current with emitter open.
0.5A.
30 to 60 at 10mA collector current and 1.0V collector-emitter voltage.
-65°C to +200°C.
0.8W at 25°C free air temperature.
30V minimum at 10mA collector current with base open.
1.7µA maximum at VCB=40V.