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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,568 pcs
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2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
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| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N3719 is a PNP bipolar junction transistor manufactured by Microchip Technology. It features a collector-emitter breakdown voltage of 40V and a maximum collector current of 10µA. The device offers a DC current gain (hFE) of 25 minimum at 1A collector current and 1.5V Vce. The maximum Vce saturation voltage is 1.5V at 300mA base current and 3A collector current.
With a transition frequency of 60MHz and maximum power dissipation of 6W, this transistor is suitable for general-purpose switching and amplification applications. It operates over a junction temperature range of -65°C to 200°C.
The 2N3719 is available in a through-hole TO-205AA / TO-5-3 metal can package, with the supplier device package designated as TO-5. This package provides robust mechanical and thermal performance for demanding environments.
| Qty | Low | High |
|---|---|---|
| 100+ | $18.28 | $18.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating junction temperature range is -65°C to 200°C.
The 2N3719 is available in a TO-205AA / TO-5-3 metal can through-hole package, with the supplier device package designated as TO-5.
The part is listed as RoHS3 compliant, but this status is unverified and has low confidence.
The minimum collector-emitter breakdown voltage is 40V.
The minimum DC current gain is 25 at Ic=1A and Vce=1.5V.