| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14 pcs
|
14 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Power Dissipation | |
| Thermal Resistance |
The SEMELAB 2N3716 is a silicon NPN power transistor manufactured using the epitaxial-base process. It is housed in a hermetically sealed TO-3 metal package, making it suitable for demanding applications.
This transistor features a Collector-Base Voltage (V_CBO) of 100V and a Collector-Emitter Voltage (V_CEO) of 80V. It can handle a Continuous Collector Current (I_C) of up to 10A and a Continuous Base Current (I_B) of 4.0A. The Power Dissipation (P_D) is rated at 150W at 25°C case temperature.
Electrical characteristics include a typical DC Current Gain (hFE) of 50-150 at I_C=1.0A and V_CE=2.0V. The transition frequency (fT) is 4.0 MHz at V_CE=10V and I_C=0.5A. Switching times are also specified, with rise time (tr) and fall time (tf) at 0.4 μs and storage time (ts) at 0.3 μs.
The operating and storage junction temperature range is -65°C to +200°C. The thermal resistance (junction-to-case) is 1.17°C/W. This transistor is designed for medium speed switching and amplifier applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (V_CEO) for the 2N3716 is 80V.
The maximum Continuous Collector Current (I_C) for the 2N3716 is 10A.
The 2N3716 transistor is supplied in a TO-3 package.
The operating and storage junction temperature range for the 2N3716 is -65°C to +200°C.