| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,777 pcs
|
8777 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The 2N3716 is an NPN power silicon transistor manufactured by Microchip Technology. It is designed for general-purpose power switching and amplification applications.
Key electrical specifications include a collector-emitter voltage (Vceo) of 80V, a collector current (Ic) of 10A, and a power dissipation (Pd) of 5W. The DC current gain (hFE) has a minimum of 50 at Ic=1A and Vce=2V, and the collector-emitter saturation voltage (Vce sat) is a maximum of 2.5V at Ib=2A and Ic=10A.
The transistor is housed in a TO-204AA (TO-3) through-hole package, with a supplier device package of TO-204AD (TO-3). It supports an operating junction temperature range of -65°C to 200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $57.97 | $57.97 |
| 25+ | $57.96 | $57.96 |
| 100+ | $53.82 | $53.82 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vceo) is 80V.
The maximum collector current (Ic) is 10A.
The power dissipation (Pd) is 5W.
The 2N3716 is available in a TO-204AA (TO-3) through-hole package, with a supplier device package of TO-204AD (TO-3).
The operating junction temperature range is -65°C to 200°C.
The minimum DC current gain (hFE) is 50 at Ic=1A and Vce=2V.
The maximum collector-emitter saturation voltage (Vce sat) is 2.5V at Ib=2A and Ic=10A.