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The 2N3715 is an NPN Power Silicon Transistor manufactured by Motorola Semiconductor. It is designed for power switching and amplification applications, featuring a robust TO-3 (TO-204AA) package suitable for through-hole mounting.
Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of 60V for the 2N3715 variant and 80V for the 2N3716. The device can handle a continuous collector current (IC) of up to 10A and a base current (IB) of 4A. Power dissipation is rated at 5W at an ambient temperature of 25°C and 17W at a case temperature of 25°C. The operating and storage junction temperature range is from -65°C to +200°C.
ON characteristics include a forward current transfer ratio (hFE) ranging from 50-150 at IC=1.0A and VCE=2.0V, and 30-120 at IC=3.0A and VCE=2.0V. Saturation voltages are also specified, with VCE(sat) at a maximum of 1.0V for IC=5.0A, IB=0.5A, and VBE(sat) at a maximum of 1.5V under the same conditions.
Dynamic characteristics include a small-signal forward current transfer ratio (|hfe|) of 4.0-20.0 at 1kHz and a higher frequency hfe of 30-300 at 1MHz. Output capacitance (Cobo) is a maximum of 500pF. The transistor is available in JAN, JANTX, and JANTXV specifications per MIL-PRF-19500/408.
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (V(BR)CEO) for the 2N3715 is a minimum of 60 Vdc.
The maximum continuous collector current (IC) for the 2N3715 is 10 Adc.
The 2N3715 is available in a TO-3 (TO-204AA) package.
The operating and storage junction temperature range for the 2N3715 is -65 to +200 °C.
The thermal resistance from junction to case (RthJC) for the 2N3715 is a maximum of 1.5 °C/W.
The forward current transfer ratio (hFE) for the 2N3715 is between 50 and 150 at IC = 1.0 Adc and VCE = 2.0 Vdc.
The output capacitance (Cobo) of the 2N3715 is a maximum of 500 pF under the test conditions of VCB = 10 Vdc, IE = 0, and f = 1.0 MHz.