2N3715 The 2N3715 is an NPN Power Silicon Transistor from Motorola Semiconductor, housed in a TO-3 package. It offers a collector-emitter voltage of up to 60V and a collector current of 10A.
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2N3715

Available from 1 distributors
Mfr Name: Motorola Semicondutor
Motorola Semicondutor
The 2N3715 is an NPN Power Silicon Transistor from Motorola Semiconductor, housed in a TO-3 package. It offers a collector-emitter voltage of up to 60V and a collector current of 10A.
✓ Total Stock: 1 pcs
$ Price Range: $0.77

2N3715 Available from 1 distributor

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2N3715 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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2N3715 Description

Short technical summary and product information.

The 2N3715 is an NPN Power Silicon Transistor manufactured by Motorola Semiconductor. It is designed for power switching and amplification applications, featuring a robust TO-3 (TO-204AA) package suitable for through-hole mounting.

 

Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of 60V for the 2N3715 variant and 80V for the 2N3716. The device can handle a continuous collector current (IC) of up to 10A and a base current (IB) of 4A. Power dissipation is rated at 5W at an ambient temperature of 25°C and 17W at a case temperature of 25°C. The operating and storage junction temperature range is from -65°C to +200°C.

 

ON characteristics include a forward current transfer ratio (hFE) ranging from 50-150 at IC=1.0A and VCE=2.0V, and 30-120 at IC=3.0A and VCE=2.0V. Saturation voltages are also specified, with VCE(sat) at a maximum of 1.0V for IC=5.0A, IB=0.5A, and VBE(sat) at a maximum of 1.5V under the same conditions.

 

Dynamic characteristics include a small-signal forward current transfer ratio (|hfe|) of 4.0-20.0 at 1kHz and a higher frequency hfe of 30-300 at 1MHz. Output capacitance (Cobo) is a maximum of 500pF. The transistor is available in JAN, JANTX, and JANTXV specifications per MIL-PRF-19500/408.

2N3715 Quick Information

Product Type: NPN Power Silicon Transistor
Canonical Name: 2N3715 NPN Power Silicon Transistor
Subcategory: Single

2N3715 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N3715 Estimated Pricing

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1+ $0.77 $0.77

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N3715 Features

  • NPN Power Silicon Transistor
  • TO-3 (TO-204AA) Package
  • 60V Collector-Emitter Breakdown Voltage
  • 10A Continuous Collector Current
  • Wide Operating Temperature Range

2N3715 Applications

  • Power switching applications
  • Amplification circuits
  • High current applications
  • High voltage applications

2N3715 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the 2N3715?

The collector-emitter breakdown voltage (V(BR)CEO) for the 2N3715 is a minimum of 60 Vdc.

What is the maximum collector current for the 2N3715?

The maximum continuous collector current (IC) for the 2N3715 is 10 Adc.

What is the package type for the 2N3715 transistor?

The 2N3715 is available in a TO-3 (TO-204AA) package.

What is the operating temperature range for the 2N3715?

The operating and storage junction temperature range for the 2N3715 is -65 to +200 °C.

What is the thermal resistance (junction-to-case) of the 2N3715?

The thermal resistance from junction to case (RthJC) for the 2N3715 is a maximum of 1.5 °C/W.

What is the forward current transfer ratio (hFE) of the 2N3715 at IC=1.0A?

The forward current transfer ratio (hFE) for the 2N3715 is between 50 and 150 at IC = 1.0 Adc and VCE = 2.0 Vdc.

What is the output capacitance (Cobo) of the 2N3715?

The output capacitance (Cobo) of the 2N3715 is a maximum of 500 pF under the test conditions of VCB = 10 Vdc, IE = 0, and f = 1.0 MHz.

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